Texas Instruments CSD18532NQ5B Handleiding

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V

GS

- Gate-to-Source Voltage (V)

R

DS(on)

- On-State Resistance (m:)

02468101214161820

0

2

4

6

8

10

12

14

D007

T

C

= 25°C, I

D

= 25 A

T

C

= 125°C, I

D

= 25 A

Q

g

- Gate Charge (nC)

V

GS

- Gate-to-Source Voltage (V)

05101520253035404550

0

1

2

3

4

5

6

7

8

9

10

D004

I

D

= 25 A

V

DS

= 30 V

1

D

2

D

3

D

4

D

D

5

G

6S

7

S

8S

P0093-01

Product

Folder

Order

Now

Technical

Documents

Tools &

Software

Support &

Community

AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications,

intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

CSD18532NQ5B

SLPS440C–JUNE2013–REVISEDFEBRUARY2018

CSD18532NQ5B60-VN-ChannelNexFET™PowerMOSFET

1

1Features

1

•Ultra-LowQ

g

andQ

gd

•Low-ThermalResistance

•AvalancheRated

•Lead-FreeTerminalPlating

•RoHSCompliant

•HalogenFree

•SON5-mm×6-mmPlasticPackage

2Applications

•DC-DCConversion

•SecondarySideSynchronousRectifier

•IsolatedConverterPrimarySideSwitch

•MotorControl

3Description

This60-V,2.7-mΩ,5-mm×6-mmSONNexFET™

powerMOSFEThasbeendesignedtominimize

lossesinpowerconversionapplications.

TopView

ProductSummary

T

A

=25°CTYPICALVALUEUNIT

V

DS

Drain-to-SourceVoltage60V

Q

g

GateChargeTotal(10V)49nC

Q

gd

GateChargeGate-to-Drain7.9nC

R

DS(on)

Drain-to-SourceOn-Resistance

V

GS

=6V3.5

mΩ

V

GS

=10V2.7

V

GS(th)

ThresholdVoltage2.8V

DeviceInformation

DEVICEQTYMEDIAPACKAGESHIP

CSD18532NQ5B250013-InchReelSON

5.00-mm×6.00-mm

PlasticPackage

Tape

and

Reel

CSD18532NQ5BT2507-InchReel

AbsoluteMaximumRatings

T

A

=25°CVALUEUNIT

V

DS

Drain-to-SourceVoltage60V

V

GS

Gate-to-SourceVoltage±20V

I

D

ContinuousDrainCurrent(PackageLimited)100

A

ContinuousDrainCurrent(SiliconLimited),

T

C

=25°C

151

ContinuousDrainCurrent

(1)

21

I

DM

PulsedDrainCurrent

(2)

400A

P

D

PowerDissipation

(1)

3.1

W

PowerDissipation,T

C

=25°C156

T

J

,

T

stg

OperatingJunctionTemperature,

StorageTemperature

–55to150°C

E

AS

AvalancheEnergy,SinglePulse

I

D

=85A,L=0.1mH,R

G

=25Ω

360mJ

(1)TypicalR

θJA

=40°C/Wona1-in

2

,2-ozCupadona0.06-in

thickFR4PCB.

(2)MaxR

θJC

=0.8°C/W,pulseduration≤100μs,dutycycle≤

1%.

R

DS(on)

vsV

GS

GateCharge

Product specificaties