Texas Instruments CSD18502Q5B Handleiding

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V

GS

- Gate-to-Source Voltage (V)

R

DS(on)

- On-State Resistance (m:)

02468101214161820

0

1

2

3

4

5

6

7

8

D007

T

C

= 25°C, I

D

= 30 A

T

C

= 125°C, I

D

= 30 A

Q

g

- Gate Charge (nC)

V

GS

- Gate-to-Source Voltage (V)

0510152025303540455055

0

2

4

6

8

10

D004

I

D

= 30 A

V

DS

= 20 V

1

D

2

D

3

D

4

D

D

5

G

6S

7

S

8S

P0093-01

Product

Folder

Order

Now

Technical

Documents

Tools &

Software

Support &

Community

Reference

Design

AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications,

intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

CSD18502Q5B

SLPS320B–NOVEMBER2012–REVISEDMAY2017

CSD18502Q5B40VN-ChannelNexFET™PowerMOSFET

1

1Features

1

•Ultra-LowQ

g

andQ

gd

•LowThermalResistance

•AvalancheRated

•LogicLevel

•Pb-FreeTerminalPlating

•RoHSCompliant

•Halogen-Free

•SON5mm×6mmPlasticPackage

2Applications

•DC-DCConversion

•SecondarySideSynchronousRectifier

•MotorControl

3Description

This40-V,1.8-mΩ,5mm×6mmNexFET™power

MOSFETisdesignedtominimizelossesinpower

conversionapplications.

TopView

ProductSummary

T

A

=25°CTYPICALVALUEUNIT

V

DS

Draintosourcevoltage40V

Q

g

Gatechargetotal(4.5V)25nC

Q

gd

Gatechargegatetodrain8.4nC

R

DS(on)

Draintosourceonresistance

V

GS

=4.5V2.5mΩ

V

GS

=10V1.8mΩ

V

GS(th)

Thresholdvoltage1.8V

OrderingInformation

(1)

DEVICEQTYMEDIAPACKAGESHIP

CSD18502Q5B250013-InchReel

SON5mm×6mm

PlasticPackage

Tapeand

Reel

CSD18502Q5BT2507-InchReel

(1)Forallavailablepackages,seetheorderableaddendumat

theendofthedatasheet.

AbsoluteMaximumRatings

T

A

=25°CVALUEUNIT

V

DS

Draintosourcevoltage40V

V

GS

Gatetosourcevoltage±20V

I

D

Continuousdraincurrent(packagelimited)100

A

Continuousdraincurrent(siliconlimited),T

C

=25°C

204

Continuousdraincurrent

(1)

26

I

DM

Pulseddraincurrent

(2)

400A

P

D

Powerdissipation

(1)

3.2

W

Powerdissipation,T

C

=25°C156

T

J

Operatingjunctiontemperature–55to150°C

T

stg

Storagetemperature–55to150°C

E

AS

Avalancheenergy,singlepulse

I

D

=88A,L=0.1mH,R

G

=25Ω

387mJ

(1)TypicalR

θJA

=40°C/Wona1inch

2

,2oz.Cupadona0.06

inchthickFR4PCB.

(2)MaxR

θJC

=0.8°C/W,pulseduration≤100μs,dutycycle≤1%

R

DS(on)

vsV

GS

GateCharge

Product specificaties