Texas Instruments CSD16411Q3 Handleiding

Bekijk gratis de handleiding van Texas Instruments CSD16411Q3 (12 pagina’s), behorend tot de categorie Niet gecategoriseerd. Deze gids werd als nuttig beoordeeld door 2 mensen en kreeg gemiddeld 4.6 sterren uit 8 reviews. Heb je een vraag over Texas Instruments CSD16411Q3 of wil je andere gebruikers van dit product iets vragen? Stel een vraag

V

GS

- Gate-to-Source Voltage (V)

R

DS(on)

- On-State Resistance (m:)

024681012

0

4

8

12

16

20

24

28

32

36

40

D007

T

C

= 25qC, I

D

= 10 A

T

C

= 125qC, I

D

= 10 A

Q

g

- Gate Charge (nC)

V

GS

- Gate-to-Source Voltage (V)

01234567

0

1

2

3

4

5

6

7

8

9

10

D004

I

D

= 10 A

V

DS

= 12.5 V

Product

Folder

Sample &

Buy

Technical

Documents

Tools &

Software

Support &

Community

AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications,

intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

CSD16411Q3

SLPS206B–AUGUST2009–REVISEDNOVEMBER2016

CSD16411Q325-VN-ChannelNexFET™PowerMOSFET

1

1Features

1

•Ultra-LowQ

g

andQ

gd

•Low-ThermalResistance

•AvalancheRated

•Lead-FreeTerminalPlating

•RoHSCompliant

•HalogenFree

•SON3.3-mm×3.3-mmPlasticPackage

2Applications

•Point-of-LoadSynchronousBuckConverterfor

ApplicationsinNetworking,Telecomand

ComputingSystems

•OptimizedforControlFETApplications

3Description

This25-V,8-mΩ,3.3-mm×3.3-mmSONNexFET™

powerMOSFEThasbeendesignedtominimize

lossesinpowerconversionapplications.

TopView

ProductSummary

T

A

=25°CTYPICALVALUEUNIT

V

DS

Drain-to-SourceVoltage25V

Q

g

GateChargeTotal(4.5V)2.9nC

Q

gd

GateChargeGate-to-Drain0.7nC

R

DS(on)

Drain-to-SourceOnResistance

V

GS

=4.5V12

mΩ

V

GS

=10V8

V

GS(th)

ThresholdVoltage2V

DeviceInformation

(1)

DEVICEQTYMEDIAPACKAGESHIP

CSD16411Q32500

13-InchReel

SON

3.30-mm×3.30-mm

PlasticPackage

Tape

and

Reel

CSD16411Q3T250

(1)Forallavailablepackages,seetheorderableaddendumat

theendofthedatasheet.

AbsoluteMaximumRatings

T

A

=25°CVALUEUNIT

V

DS

Drain-to-SourceVoltage25V

V

GS

Gate-to-SourceVoltage+16/–12V

I

D

ContinuousDrainCurrent(PackageLimited)60

A

ContinuousDrainCurrent(SiliconLimited),

T

C

=25°C

50

ContinuousDrainCurrent

(1)

14

I

DM

PulsedDrainCurrent,T

A

=25°C

(2)

130A

P

D

PowerDissipation

(1)

2.87

W

PowerDissipation,T

C

=25°C35

T

J

,

T

STG

OperatingJunction

StorageTemperature

–55to150°C

E

AS

AvalancheEnergy,SinglePulse

I

D

=18A,L=0.1mH,R

G

=25Ω

16mJ

(1)R

θJA

=45°C/Won1-in

2

Cu(2-oz)on0.06-inthickFR4PCB.

(2)MaxR

θJC

=3.5°C/W,pulseduration≤100μs,dutycycle≤

1%.

R

DS(ON)

vsV

GS

GateCharge

Product specificaties