Texas Instruments LMG5200 Handleiding

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SW

PGND

HS

LI

GaN Driver

VCCAGND

HO

HB

HI

LO

8

9

VIN1

HI

LI

4

5

HS

3

HB

2

VCC

6

AGND

7

LMG5200

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Design

AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications,

intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

LMG5200

SNOSCY4E–MARCH2015–REVISEDOCTOBER2018

LMG520080-V,10-AGaNHalf-BridgePowerStage

1

1Features

1

•Integrated15-mΩGaNFETsandDriver

•80-VContinuous,100-VPulsedVoltageRating

•PackageOptimizedforEasyPCBLayout,

EliminatingNeedforUnderfill,Creepage,and

ClearanceRequirements

•VeryLowCommonSourceInductancetoEnsure

HighSlewRateSwitchingWithoutCausing

ExcessiveRinginginHard-SwitchedTopologies

•IdealforIsolatedandNon-IsolatedApplications

•GateDriverCapableofUpto10MHzSwitching

•InternalBootstrapSupplyVoltageClampingto

PreventGaNFETOverdrive

•SupplyRailUndervoltageLockoutProtection

•ExcellentPropagationDelay(29.5nsTypical)and

Matching(2nsTypical)

•LowPowerConsumption

2Applications

•WideV

IN

Multi-MHzSynchronousBuck

Converters

•ClassDAmplifiersforAudio

•48-VPoint-of-Load(POL)ConvertersforTelecom,

Industrial,andEnterpriseComputing

•HighPowerDensitySingle-andThree-Phase

MotorDrive

3Description

TheLMG5200device,an80-V,10-AdriverplusGaN

half-bridgepowerstage,providesanintegrated

powerstagesolutionusingenhancement-mode

GalliumNitride(GaN)FETs.Thedeviceconsistsof

two80-VGaNFETsdrivenbyonehigh-frequency

GaNFETdriverinahalf-bridgeconfiguration.

GaNFETsprovidesignificantadvantagesforpower

conversionastheyhavenearzeroreverserecovery

andverysmallinputcapacitanceC

ISS

.Allthedevices

aremountedonacompletelybond-wirefreepackage

platformwithminimizedpackageparasiticelements.

TheLMG5200deviceisavailableina6mm×8mm

×2mmlead-freepackageandcanbeeasily

mountedonPCBs.

TheTTLlogiccompatibleinputscanwithstandinput

voltagesupto12VregardlessoftheVCCvoltage.

Theproprietarybootstrapvoltageclampingtechnique

ensuresthegatevoltagesoftheenhancementmode

GaNFETsarewithinasafeoperatingrange.

ThedeviceextendsadvantagesofdiscreteGaN

FETsbyofferingamoreuser-friendlyinterface.Itis

anidealsolutionforapplicationsrequiringhigh-

frequency,high-efficiencyoperationinasmallform

factor.WhenusedwiththeTPS53632Gcontroller,

theLMG5200enablesdirectconversionfrom48-Vto

point-of-loadvoltages(0.5-1.5V).

DeviceInformation

(1)

PARTNUMBERPACKAGEBODYSIZE(NOM)

LMG5200QFM(9)6.00mm×8.00mm

(1)Forallavailablepackages,seetheorderableaddendumat

theendofthedatasheet.

SimplifiedBlockDiagram

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