Texas Instruments LMV1032 Handleiding

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V

IN

V

OUT

1x

GAIN

V

DC

V

DD

GND

GND

DIAPHRAGM

AIRGAP

BACKPLATE

ELECTRET

CONNECTOR

LMV1032

x

x

x

x

x

x

x

x

xxx

x

xx

x

IC

V

CC

V

OUT

LMV1032

www.ti.com

SNAS233G–DECEMBER2003–REVISEDMAY2013

LMV1032-06/LMV1032-15/LMV1032-25Amplifiersfor3-WireAnalogElectretMicrophones

CheckforSamples:LMV1032

1

FEATURES

DESCRIPTION

TheLMV1032sareanaudioamplifierseriesforsmall

2

•(TypicalLMV1032-15,1.7VSupply;Unless

formfactorelectretmicrophones.Theyaredesigned

OtherwiseNoted)

toreplacetheJFETpreampcurrentlybeingused.

•OutputVoltageNoise(A-weighted)−89dBV

TheLMV1032seriesisidealforextendedbatterylife

•LowSupplyCurrent60μA

applications,suchasaBluetoothcommunicationlink.

Theadditionofathirdpintoanelectretmicrophones

•SupplyVoltage1.7Vto5V

thatincorporatesanLMV1032allowsforadramatic

•PSRR70dB

reductioninsupplycurrentascomparedtotheJFET

•SignaltoNoiseRatio61dB

equippedelectretmicrophone.Microphonesupply

currentisthusreducedto60µA,assuringlonger

•InputCapacitance2pF

batterylife.TheLMV1032seriesisspecifiedfor

•InputImpedance>100MΩ

supplyvoltagesfrom1.7Vto5V,andhasfixed

•OutputImpedance<200Ω

voltagegainsof6dB,15dBand25dB.

•MaxInputSignal170mV

PP

TheLMV1032seriesofferslowoutputimpedance

•TemperatureRange−40°Cto85°C

overthevoicebandwidth,excellentpowersupply

rejection(PSRR),andstabilityovertemperature.

•LargeDome4-BumpDSBGAPackagewith

ImprovedAdhesionTechnology.

Thedevicesareofferedinspacesaving4-bumpultra

thinDSBGAleadfreepackagesandarethusideally

APPLICATIONS

suitedfortheformfactorofminiatureelectret

microphonepackages.Theseextremelyminiature

•MobileCommunications-Bluetooth

packageshavetheLargeDomeBump(LDB)

•AutomotiveAccessories

technology.ThisDSBGAtechnologyisdesignedfor

microphonePCBsrequiring1kgadhesioncriteria.

•CellularPhones

•PDAs

•AccessoryMicrophoneProducts

BlockDiagramElectretMicrophone

Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam

duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.

1

Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof

TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.

2Alltrademarksarethepropertyoftheirrespectiveowners.

PRODUCTIONDATAinformationiscurrentasofpublicationdate.

Copyright©2003–2013,TexasInstrumentsIncorporated

ProductsconformtospecificationsperthetermsoftheTexas

Instrumentsstandardwarranty.Productionprocessingdoesnot

necessarilyincludetestingofallparameters.

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