Texas Instruments LMV1015 Handleiding

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OUTPUT

GND

INPUT

-

+

2.2k

2.2PF

V

DD

-

+

DIAPHRAGM

AIRGAP

BACKPLATE

ELECTRET

CONNECTOR

LMV1015

x

x

x

x

x

x

x

x

xxx

x

xx

xx

IC

LMV1015

www.ti.com

SNAS291B–MARCH2005–REVISEDAPRIL2013

LMV1015AnalogSeries:Built-inGainIC'sforHighSensitivity2-WireMicrophones

CheckforSamples:LMV1015

1

FEATURES

DESCRIPTION

TheLMV1015isanaudioamplifierseriesforsmall

2

•(TypicalLMV1015-15,2.2Vsupply,R

L

=2.2kΩ,

formfactorelectretmicrophones.This2-wireportfolio

C=2.2μF,V

IN

=18mV

PP

,unlessotherwise

isdesignedtoreplacetheJFETamplifier.The

specified)

LMV1015seriesisideallysuitedforapplications

•SupplyVoltage:2V-5V

requiringhighsignalintegrityinthepresenceof

ambientorRFnoise,suchasincellular

•SupplyCurrent:<180μA

communications.TheLMV1015audioamplifiersare

•SignaltoNoiseRatio(A-Weighted):60dB

ensuredtooperateovera2.2Vto5.0Vsupply

•OutputVoltageNoise(A-Weighted):−89dBV

voltagerangewithfixedgainsof15.6dBand23.8

•TotalHarmonicDistortion0.09%

dB.ThedevicesofferexcellentTHD,gainaccuracy

andtemperaturestabilityascomparedtoaJFET

•VoltageGain

microphone.

–LMV1015-15:15.6dB

TheLMV1015seriesenablesatwo-pinelectret

–LMV1015-25:23.8dB

microphonesolution,whichprovidesdirectpin-to-pin

•TemperatureRange:−40°Cto85°C

compatibilitywiththeexistingolderJFETmarket.

•LargeDome4-BumpDSBGAPackagewith

TexasInstruments'built-ingainfamiliesareofferedin

ImprovedAdhesionTechnology.

extremelythinspacesaving4-bumpDSBGA

packages(0.3mmmaximum).TheLMV1015XRis

APPLICATIONS

designedfor1.0mmECMcanistersandthicker.

TheseextremelyminiaturepackageshavetheLarge

•CellularPhones

DomeBump(LDB)technology.ThisDSBGA

•Headsets

technologyisdesignedformicrophonePCBs

•MobileCommunications

requiring1kgadhesioncriteria.

•AutomotiveAccessories

•PDAs

•AccessoryMicrophoneProducts

SchematicDiagramBuilt-InGainElectretMicrophone

Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam

duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.

1

Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof

TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.

2Alltrademarksarethepropertyoftheirrespectiveowners.

PRODUCTIONDATAinformationiscurrentasofpublicationdate.

Copyright©2005–2013,TexasInstrumentsIncorporated

ProductsconformtospecificationsperthetermsoftheTexas

Instrumentsstandardwarranty.Productionprocessingdoesnot

necessarilyincludetestingofallparameters.

Product specificaties