Texas Instruments LMG3612 Handleiding
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LMG3612 650-V 120-mΩ GaN FET With Integrated Driver
1 Features
•650-V 120-mΩ GaN power FET
•Integrated gate driver with low propagation delays
and adjustable turn-on slew-rate control
•Overtemperature protection with FLT pin reporting
•AUX quiescent current: 55 μA
•Maximum supply and input logic pin voltage: 26 V
•8 mm × 5.3 mm QFN package with thermal pad
2 Applications
•AC/DC adapters and chargers
•AC/DC USB wall outlet power supplies
•AC/DC auxiliary power supplies
•Television power supplies
•Mobile wall charger design
•USB wall power outlet
•Auxiliary-power supplies
•SMPS power supply for TV
•LED Power Supply
IN
RDRV
AGNDS
D
GaN
FET
Control
+
Driver
FLT
AUX
Simplified Block Diagram
3 Description
The LMG3612 is a 650-V 120-mΩ GaN power FET
intended for switch-mode power-supply applications.
The LMG3612 simplifies design and reduces
component count by integrating the GaN FET and
gate driver in a 8-mm by 5.3-mm QFN package.
Programmable turn-on slew rates provide EMI and
ringing control.
The LMG3612 supports converter light-load efficiency
requirements and burst-mode operation with low
quiescent currents and fast start-up times. Protection
features include under-voltage lockout (UVLO)
and overtemperature protection. Overtemperature
protection is reported with the open-drain FLT pin.
Package Information
PART NUMBERPACKAGE
(1)
PACKAGE SIZE
(2)
LMG3612REQ (VQFN, 38)8 mm × 5.3 mm
(1)For all available packages, see the orderable addendum at
the end of the data sheet.
(2)The package size (length × width) is a nominal value and
includes pins, where applicable.
38-Pin VQFN
LMG3612
SLUSFB9 – NOVEMBER 2023
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
Product specificaties
| Merk: | Texas Instruments |
| Categorie: | Niet gecategoriseerd |
| Model: | LMG3612 |
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