Texas Instruments LMG3612 Handleiding

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LMG3612 650-V 120-mΩ GaN FET With Integrated Driver

1 Features

•650-V 120-mΩ GaN power FET

•Integrated gate driver with low propagation delays

and adjustable turn-on slew-rate control

•Overtemperature protection with FLT pin reporting

•AUX quiescent current: 55 μA

•Maximum supply and input logic pin voltage: 26 V

•8 mm × 5.3 mm QFN package with thermal pad

2 Applications

•AC/DC adapters and chargers

•AC/DC USB wall outlet power supplies

•AC/DC auxiliary power supplies

•Television power supplies

•Mobile wall charger design

•USB wall power outlet

•Auxiliary-power supplies

•SMPS power supply for TV

•LED Power Supply

IN

RDRV

AGNDS

D

GaN

FET

Control

+

Driver

FLT

AUX

Simplified Block Diagram

3 Description

The LMG3612 is a 650-V 120-mΩ GaN power FET

intended for switch-mode power-supply applications.

The LMG3612 simplifies design and reduces

component count by integrating the GaN FET and

gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and

ringing control.

The LMG3612 supports converter light-load efficiency

requirements and burst-mode operation with low

quiescent currents and fast start-up times. Protection

features include under-voltage lockout (UVLO)

and overtemperature protection. Overtemperature

protection is reported with the open-drain FLT pin.

Package Information

PART NUMBERPACKAGE

(1)

PACKAGE SIZE

(2)

LMG3612REQ (VQFN, 38)8 mm × 5.3 mm

(1)For all available packages, see the orderable addendum at

the end of the data sheet.

(2)The package size (length × width) is a nominal value and

includes pins, where applicable.

38-Pin VQFN

LMG3612

SLUSFB9 – NOVEMBER 2023

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

Product specificaties