Texas Instruments LMG3410R150 Handleiding
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DRAIN
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Slew rate
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VDD
LDO
BB
OCP
OTP
UVLO
FAULT
VNEG
S
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600-V
GaN
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AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications,
intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.
LMG3411R150
,
LMG3410R150
SNOSD91B–MARCH2019–REVISEDFEBRUARY2020
LMG341xR150600-V,150-mΩ,GaNFETwithIntegratedDriverandProtection
1
1Features
1
•TIGaNprocessqualifiedthroughaccelerated
reliabilityin-applicationhard-switchingprofiles
•Enableshigh-densitypowerconversiondesigns
–Superiorsystemperformanceovercascodeor
stand-aloneGaNFETs
–Lowinductance8mm×8mmQFNpackage
foreaseofdesignandlayout
–Adjustabledrivestrengthforswitching
performanceandEMIcontrol
–Digitalfaultstatusoutputsignal
–Only+12Vofunregulatedsupplyneeded
•Integratedgatedriver
–Zerocommonsourceinductance
–20-nspropagationdelayforhigh-frequency
design
–Trimmedgatebiasvoltagetocompensatefor
thresholdvariationsensuresreliableswitching
–25-V/nsto100-V/nsadjustableslewrate
•Robustprotection
–Requiresnoexternalprotectioncomponents
–Overcurrentprotectionwith<100nsresponse
–Greaterthan150-V/nsslewrateimmunity
–Transientovervoltageimmunity
–Overtemperatureprotection
–Undervoltagelockout(UVLO)protectiononall
supplyrails
•DeviceOptions:
–LMG3410R150:Latchedovercurrent
protection
–LMG3411R150:Cycle-by-cycleovercurrent
proection
2Applications
•IndustrialAC-DC
•NotebookPCpoweradapters
•LEDsignage
•Servodrivepowerstage
3Description
TheLMG341xR150GaNFETwithintegrateddriver
andprotectionenablesdesignerstoachievenew
levelsofpowerdensityandefficiencyinpower
electronicssystems.Theinherentadvantagesofthis
deviceoversiliconMOSFETsincludeultra-lowinput
andoutputcapacitance,zeroreverserecoveryto
reduceswitchinglossesbyasmuchas80%,andlow
switchnoderingingtoreduceEMI.Theseadvantages
enabledenseandefficienttopologieslikethetotem-
polePFC.
TheLMG341xR150providesasmartalternativeto
traditionalcascodeGaNandstandaloneGaNFETs
byintegratingauniquesetoffeaturestosimplify
design,maximizereliabilityandoptimizethe
performanceofanypowersupply.Integratedgate
driveenables100V/nsswitchingwithnearzeroV
DS
ringing,lessthan100-nscurrentlimitingresponse
self-protectsagainstunintendedshoot-through
events,Overtemperatureshutdownpreventsthermal
runaway,andsysteminterfacesignalsprovideself-
monitoringcapability.
DeviceInformation
(1)
PARTNUMBERPACKAGEBODYSIZE(NOM)
LMG341xR150QFN(32)8.00mm×8.00mm
(1)Forallavailablepackages,seetheorderableaddendumat
theendofthedatasheet.
SimplifiedBlockDiagramSwitchingPerformance
V
DS
SlewRate>100V/ns
Product specificaties
| Merk: | Texas Instruments |
| Categorie: | Niet gecategoriseerd |
| Model: | LMG3410R150 |
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