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DRAIN

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IN

LDO5V

Slew rate

Direct-drive

VDD

LDO

BB

OCP

OTP

UVLO

FAULT

VNEG

S

SOURCE

600-V

GaN

Current

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AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications,

intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

LMG3411R150

,

LMG3410R150

SNOSD91B–MARCH2019–REVISEDFEBRUARY2020

LMG341xR150600-V,150-mΩ,GaNFETwithIntegratedDriverandProtection

1

1Features

1

•TIGaNprocessqualifiedthroughaccelerated

reliabilityin-applicationhard-switchingprofiles

•Enableshigh-densitypowerconversiondesigns

–Superiorsystemperformanceovercascodeor

stand-aloneGaNFETs

–Lowinductance8mm×8mmQFNpackage

foreaseofdesignandlayout

–Adjustabledrivestrengthforswitching

performanceandEMIcontrol

–Digitalfaultstatusoutputsignal

–Only+12Vofunregulatedsupplyneeded

•Integratedgatedriver

–Zerocommonsourceinductance

–20-nspropagationdelayforhigh-frequency

design

–Trimmedgatebiasvoltagetocompensatefor

thresholdvariationsensuresreliableswitching

–25-V/nsto100-V/nsadjustableslewrate

•Robustprotection

–Requiresnoexternalprotectioncomponents

–Overcurrentprotectionwith<100nsresponse

–Greaterthan150-V/nsslewrateimmunity

–Transientovervoltageimmunity

–Overtemperatureprotection

–Undervoltagelockout(UVLO)protectiononall

supplyrails

•DeviceOptions:

–LMG3410R150:Latchedovercurrent

protection

–LMG3411R150:Cycle-by-cycleovercurrent

proection

2Applications

•IndustrialAC-DC

•NotebookPCpoweradapters

•LEDsignage

•Servodrivepowerstage

3Description

TheLMG341xR150GaNFETwithintegrateddriver

andprotectionenablesdesignerstoachievenew

levelsofpowerdensityandefficiencyinpower

electronicssystems.Theinherentadvantagesofthis

deviceoversiliconMOSFETsincludeultra-lowinput

andoutputcapacitance,zeroreverserecoveryto

reduceswitchinglossesbyasmuchas80%,andlow

switchnoderingingtoreduceEMI.Theseadvantages

enabledenseandefficienttopologieslikethetotem-

polePFC.

TheLMG341xR150providesasmartalternativeto

traditionalcascodeGaNandstandaloneGaNFETs

byintegratingauniquesetoffeaturestosimplify

design,maximizereliabilityandoptimizethe

performanceofanypowersupply.Integratedgate

driveenables100V/nsswitchingwithnearzeroV

DS

ringing,lessthan100-nscurrentlimitingresponse

self-protectsagainstunintendedshoot-through

events,Overtemperatureshutdownpreventsthermal

runaway,andsysteminterfacesignalsprovideself-

monitoringcapability.

DeviceInformation

(1)

PARTNUMBERPACKAGEBODYSIZE(NOM)

LMG341xR150QFN(32)8.00mm×8.00mm

(1)Forallavailablepackages,seetheorderableaddendumat

theendofthedatasheet.

SimplifiedBlockDiagramSwitchingPerformance

V

DS

SlewRate>100V/ns

Product specificaties