Texas Instruments CSD17551Q3A Handleiding

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024681012

V

GS

- Gate-to- Source Voltage (V)

R

DS(on)

- On-State Resistance (mΩ)

T

C

= 25°C Id = 11A

T

C

= 125ºC Id = 11A

G001

0

2

4

6

8

10

03691215

Q

g

- Gate Charge (nC)

V

GS

- Gate-to-Source Voltage (V)

I

D

= 11A

V

DS

=15V

G001

1

D

2

D

3

D

4

D

D

5

G

6S

7

S

8S

P0093-01

Product

Folder

Sample &

Buy

Technical

Documents

Tools &

Software

Support &

Community

Reference

Design

CSD17551Q3A

SLPS386B–SEPTEMBER2012–REVISEDJANUARY2016

CSD17551Q3A30-VN-ChannelNexFET™PowerMOSFETs

1Features

ProductSummary

1

•Ultra-LowQ

g

andQ

gd

T

A

=25°CTYPICALVALUEUNIT

•LowThermalResistance

V

DS

Drain-to-SourceVoltage30V

•AvalancheRated

Q

g

GateChargeTotal(4.5V)6.0nC

Q

gd

GateChargeGate-to-Drain1.5nC

•PbFree

V

GS

=4.5V9.6mΩ

•RoHSCompliant

R

DS(on)

Drain-to-SourceOnResistance

V

GS

=10V7.8mΩ

•HalogenFree

V

GS(th)

ThresholdVoltage1.6V

•SON3.3mm×3.3mmPlasticPackage

OrderingInformation

(1)

2Applications

DEVICEQTYMEDIAPACKAGESHIP

•Point-of-LoadSynchronousBuckinNetworking,

CSD17551Q3A250013-InchReelSON

Tapeand

3.3mm×3.3mm

Telecom,andComputingSystems

Reel

CSD17551Q3AT2507-InchReel

PlasticPackage

•OptimizedforControlFETApplications

(1)Forallavailablepackages,seetheorderableaddendumat

theendofthedatasheet.

3Description

This30V,7.8mΩ,3.3mm×3.3mmNexFET™

AbsoluteMaximumRatings

powerMOSFETisdesignedtominimizelossesin

T

A

=25°CunlessotherwisestatedVALUEUNIT

powerconversionapplications.

V

DS

Drain-to-SourceVoltage30V

V

GS

Gate-to-SourceVoltage±20V

TopView

ContinuousDrainCurrent,T

C

=25°C48A

I

D

ContinuousDrainCurrent,SiliconLimited48A

ContinuousDrainCurrent,T

A

=25°C

(1)

12A

I

DM

PulsedDrainCurrent,T

A

=25°C

(2)

71A

P

D

PowerDissipation

(1)

2.6W

T

J

,OperatingJunctionTemperature,

–55to150°C

T

stg

StorageTemperature

AvalancheEnergy,singlepulse

E

AS

31mJ

I

D

=25A,L=0.1mH,R

G

=25Ω

(1)TypicalR

θJA

=48°C/Wona1inch

2

(6.45cm

2

),

SPACE2oz.(0.071mmthick)Cupadona0.06inch(1.52mm)thick

FR4PCB.

SPACE

(2)Pulseduration≤300μs,dutycycle≤2%

R

DS(on)

vsV

GS

GateCharge

1

AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications,

intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

Product specificaties