Kingston Technology ValueRAM KVR1333D3S8R9S Handleiding

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Memory Module Specification

Document No. VALUERAM0846-001.A00 09/18/09

KVR1333D3S8R9S/1GI

1GB 128M x 72-Bit PC3-10600

CL9 Registered w/Parity 240-Pin DIMM

Page 1

DESCRIPTION:

This document describes ValueRAM's 128M x 72-bit 1GB (1024MB) DDR3-1333MHz CL9 SDRAM (Synchronous

DRAM) registered w/parity, (Intel® Compatibility Tested), single-rank memory module, based on nine 128M x 8-bit

DDR3-1333MHz FBGA components. The SPD is programmed to JEDEC standard latency 1333MHz timing of 9-9-9 at

1.5V. This 240-pin DIMM uses gold contact fingers and requires +1.5V. The electrical and mechanical specifications

are as follows:

FEATURES:

JEDEC standard 1.5V ± 0.075V Power Supply

VDDQ = 1.5V ± 0.075V

667MHz fCK for 1333Mb/sec/pin

8 independent internal bank

Programmable CAS Latency: 6,7,8,9,10

Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

Programmable CAS Write Latency(CWL) = 7(DDR3-1333)

8-bit pre-fetch

Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4

which does not allow seamless read or write [either on the fly using A12 or MRS]

Bi-directional Differential Data Strobe

Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

On Die Termination using ODT pin

On-DIMM thermal sensor (Grade B)

Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C

Asynchronous Reset

PCB : Height 1.180" (30.00mm), double sided component

PERFORMANCE:

CL(IDD) 9 cycles

Row Cycle Time (tRCmin) 49.5ns (min.)

Refresh to Active/Refresh Command Time (tRFCmin) 110ns (min.)

Row Active Time (tRASmin) 36ns (min.)

Power 2.137 W (operating)

UL Rating 94 V - 0

Operating Temperature 0o C to 85o C

Storage Temperature -55o C to +100o C

ValueRAM

Document No. VALUERAM0846-001.A00 Page 2

MODULE DIMENSIONS:

(units = millimeters)

Product specificaties

Merk:	Kingston Technology
Categorie:	Niet gecategoriseerd
Model:	ValueRAM KVR1333D3S8R9S
Intern geheugen:	1 GB
Intern geheugentype:	DDR3
ECC:	Ja
Kloksnelheid geheugen:	1333 MHz
Geheugen form factor:	240-pin DIMM
Type geheugen:	DDR3
Geheugenlayout (modules x formaat):	1 x 1 GB
Type gebufferd geheugen:	Registered (buffered)
Geheugen voltage:	1.5 V
Geheugenbus:	72 Bit
Bedrijfstemperatuur (T-T):	0 - 85 °C
CAS-latentie:	9
Chips organisatie:	X8
Loden behuizing:	Goud
Duur row cycle:	49.5 ns
Duur vernieuwen row cycle:	110 ns
Duur row active:	36 ns