Texas Instruments SN74CB3Q3257PWR Handleiding

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property mattersand other important disclaimers. PRODUCTION DATA.

SN74CB3Q3257

SCDS135D– SEPTEMBER2003 – REVISEDJULY2018

SN74CB3Q3257 4-Bit 1-of-2 FET Multiplexer/Demultiplexer

2.5-V/3.3-V Low-Voltage High-BandwidthBus Switch

1

(1)For additional information regarding the performance

characteristics of the CB3Q family, refer to the TI application

report, ,CBT-C, CB3T, andCB3Q Signal-Switch Families

SCDA008.

1 Features

1

•High-Bandwidth Data Path

(up to500 MHz)

•5-V TolerantI/OsWithDevice PoweredUp or

Powered Down

•Lowand FlatON-State Resistance(ron)

Characteristics OverOperating Range

(ron= 4Typical)Ω

•Rail-to-RailSwitching onData I/OPorts

–0-to 5-VSwitching With3.3-V VCC

–0-to 3.3-VSwitching With2.5-V VCC

•BidirectionalData FlowWith Near-Zero

Propagation Delay

•Low Inputand OutputCapacitance Minimizes

Loading and Signal Distortion

(Cio(OFF) = 3.5pF Typical)

•FastSwitching Frequency(fOE =20 MHz

Maximum)

•Data and Control InputsProvide Undershoot

Clamp Diodes

•Low PowerConsumption

(ICC = 0.7mA Typical)

• VCC OperatingRange From2.3 Vto 3.6V

•Data I/OsSupport 0-to 5-VSignaling Levels

(0.8 V,1.2 V,1.5 V,1.8 V,2.5 V,3.3 V,5 V)

•Control InputsCan BeDriven byTTL or

5-V/3.3-V CMOS Outputs

• Io Supports Partial-Power-Down Mode Operation

•Latch-UpPerformance Exceeds100 mAPer

JESD 78,Class II

•ESD PerformanceTested PerJESD 22

–2000-V Human Body Model

(A114-B, ClassII)

–1000-V Charged-DeviceModel (C101)

•Supports Both Digitaland AnalogApplications:

USB Interface,Dierential SignalInterface,

Bus Isolation,Low-Distortion SignalGating(1)

2 Applications

•IP Phones:Wired andWireless

•Optical Modules

•Optical Networking:Video OverFiber andEPON

•Private BranchExchange (PBX)

•WiMAXand WirelessInfrastructure Equipment

3 Description

The SN74CB3Q3257 deviceis a high-bandwidthFET

bus switchutilizing acharge pumpto elevate the gate

voltage of the pass transistor, providing a low and at

ON-state resistance(ron).

Device Information(1)

PART NUMBERPACKAGEBODY SIZE (NOM)

SN74CB3Q3257DGVTVSOP(16)3.60 mm× 4.40 mm

SN74CB3Q3257DBQSSOP(16)4.90 mm× 3.90 mm

SN74CB3Q3257PWTSSOP(16)5.00 mm ×4.40mm

SN74CB3Q3257RGYVQFN(16)4.00 mm× 3.50 mm

(1)Forall available packages, see the orderable addendum at

the end of the data sheet.

Logic Diagram(Positive Logic)

Product specificaties